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Browsing by  AuthorGiyoun Roh

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Showing results 1 to 5 of 5
Conference
Channel-length dependence of mechanical stress effect by hybrid shallow trench isolation on NBTI degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel

ESRF2019, 2019-09-24

Conference
Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel

IWDTF 2019, 2019-11-19

Conference
Characterization of Positive Bias Temperature Instability Concerning Interfacial Layer Thickness of HfSiON/SiO2 nMOSFET

ESRF2019, 2019-09-24

Article
Fast and accurate method of lifetime estimation for HfSiON/SiO2 dielectric n-MOSFETs under positive bias temperature instabilitySCIESCOPUS

Miroelectonic Reliabilty, vol. 72, page. 98 - 102, 2017-05

Conference
Systematic analysis of electron traps of HfSiON/SiO2 nMOSFETs using TSCIS

2019 International Conference on Solid State Devices and Materials, 2019-09-02

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