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Cited 13 time in webofscience Cited 13 time in scopus
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dc.contributor.authorHan, J.-W.-
dc.contributor.authorKim, J.-
dc.contributor.authorMoon, D.-I.-
dc.contributor.authorLee, J.-S.-
dc.contributor.authorMeyyappan, M.-
dc.date.accessioned2019-12-04T15:31:10Z-
dc.date.available2019-12-04T15:31:10Z-
dc.date.created2019-04-30-
dc.date.issued2019-04-
dc.identifier.issn0741-3106-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/100312-
dc.description.abstractSoft error effects due to the alpha particle and terrestrial neutron strike are investigated in a saddle fin DRAM using the 3D TCAD simulation. The strike location and angle dependency are investigated, and the worst-case incidence condition is studied. As the strike time is relevant for the error pattern, the strike during the write period is found to have minor effect, but the strike during the hold period shows data corruption. The inter-active disturbance is effectivelysuppresseddue to the shallowtrenchisolation, but the inter-active ionizing radiation disturbance can be a potential risk as the capacitance of the storage capacitor continues to reduce with the DRAM technology scaling.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.relation.isPartOfIEEE Electron Device Letters-
dc.titleSoft Error in Saddle Fin Based DRAM-
dc.typeArticle-
dc.identifier.doi10.1109/LED.2019.2897685-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE Electron Device Letters, v.40, no.4, pp.494 - 497-
dc.identifier.wosid000464306900002-
dc.citation.endPage497-
dc.citation.number4-
dc.citation.startPage494-
dc.citation.titleIEEE Electron Device Letters-
dc.citation.volume40-
dc.contributor.affiliatedAuthorLee, J.-S.-
dc.identifier.scopusid2-s2.0-85064094792-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.type.docTypeArticle-
dc.subject.keywordAuthoralpha particle-
dc.subject.keywordAuthorDRAM-
dc.subject.keywordAuthorneutron-
dc.subject.keywordAuthorsaddle fin transistor-
dc.subject.keywordAuthorsingle event effects-
dc.subject.keywordAuthorsoft error-
dc.subject.keywordAuthorTCAD simulation-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-

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