DC Field | Value | Language |
---|---|---|
dc.contributor.author | BAEK, ROCK HYUN | - |
dc.contributor.author | JINSU, JEONG | - |
dc.contributor.author | YOON, JUN SIK | - |
dc.contributor.author | SEUNGHWAN, LEE | - |
dc.date.accessioned | 2020-01-06T02:50:20Z | - |
dc.date.available | 2020-01-06T02:50:20Z | - |
dc.date.created | 2020-01-06 | - |
dc.date.issued | 2020-08 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/100678 | - |
dc.description.abstract | In this paper, we investigated the threshold voltage (V-th) variations in sub 5-nm node silicon nanosheet FETs (NSFETs) caused by Ge and C diffusion into NS channels using fully-calibrated 3-D TCAD simulation. Ge (C) atoms of Si1-xGex (Si1-xCx) source/drain (S/D) diffuse toward the NS channels in lateral direction in p-type (n-type) FETs, and Ge atoms of Si0.7Ge0.3 stacks diffuse toward the NS channels in vertical direction. Increasing Ge mole fraction of the Si1-xGex S/D in the p-type FETs (PFETs) causing increasing compressive channel stress retards boron dopants diffusing from the Si1-xGex S/D into the NS channels, thus increasing the V-th of PFETs (V-th,V- (p)). However, the V-th,V- p decreases as the Ge mole fraction of the Si1-xGex S/D becomes greater than 0.5 due to the higher valence band energy (E-v) of the NS channels. On the other hand, the Vth of n-type FETs (NFETs) (V-th,V- n) consistently increases as the C mole fraction of the Si1-xCx S/D increases due to monotonously retarded phosphorus dopants diffusing from the Si1-xCx S/D into the NS channels. On the other hand, the V-th,V- p and V-th,V- n consistently decreases and increases, respectively, as Si/Si0.7Ge0.3 intermixing becomes severer because both Ev and conduction band energies (E-c) of the NS channels become higher. In addition, the Vth, p variations are more sensitive to the Si/Si0.7Ge0.3 intermixing than the V-th,V- n variations because the Ge mole fraction in NS channels affects the E-v remarkably rather than the E-c. As a result, the Ge atoms diffusing toward the NS channels should be carefully considered more than the C diffusion toward the NS channels for fine V-th variation optimization in sub 5-nm node NSFETs. | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.title | Threshold Voltage Variations Induced by Si1-xGex and Si1-xCx of Sub 5-nm Node Silicon Nanosheet Field-Effect Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2020.17799 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.20, no.8, pp.4684 - 4689 | - |
dc.identifier.wosid | 000518698800015 | - |
dc.citation.endPage | 4689 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 4684 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 20 | - |
dc.contributor.affiliatedAuthor | BAEK, ROCK HYUN | - |
dc.contributor.affiliatedAuthor | JINSU, JEONG | - |
dc.contributor.affiliatedAuthor | YOON, JUN SIK | - |
dc.contributor.affiliatedAuthor | SEUNGHWAN, LEE | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Sub 5-nm Node | - |
dc.subject.keywordAuthor | Nanosheet FETs | - |
dc.subject.keywordAuthor | Threshold Voltage Variations | - |
dc.subject.keywordAuthor | Process Variations | - |
dc.subject.keywordAuthor | Ge and C Diffusion | - |
dc.subject.keywordAuthor | Si1-xGex and Si1-xCx | - |
dc.subject.keywordAuthor | Si/Si0.7Ge0.3 Intermixing | - |
dc.subject.keywordAuthor | TOAD Simulation | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
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