Chemical vapor deposition of copper thin films with (hexafluoroacetylacetonate)Cu(allyltrimethylsilane)
SCIE
SCOPUS
- Title
- Chemical vapor deposition of copper thin films with (hexafluoroacetylacetonate)Cu(allyltrimethylsilane)
- Authors
- Park, MY; Son, JH; Rhee, SW
- Date Issued
- 1998-07
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- Metallorganic chemical vapor deposition of copper using a new organometallic precursor, (hexafluoroacetylacetonate)Cu(allyltrimethylsilane) was studied. It was confirmed that copper could be deposited at a substrate temperature as low as 60 degrees C. The copper film was deposited at a precursor vaporization temperature of 40-45 degrees C and a substrate temperature of 60-170 degrees C, resulting in a copper film with resistivity around 1.7-1.9 mu Omega cm. (C) 1998 The Electrochemical Society, Inc. S1099-0062(97)12-033-8.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10093
- DOI
- 10.1149/1.1390625
- ISSN
- 1099-0062
- Article Type
- Article
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 1, no. 1, page. 32 - 33, 1998-07
- Files in This Item:
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