DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, SY | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:50:27Z | - |
dc.date.available | 2015-06-25T01:50:27Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-01 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.other | 2015-OAK-0000004106 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10109 | - |
dc.description.abstract | We report low-resistant and high reflective ohmic contact on p-type GaN using a promising Ni/Au/indium-tin oxide (ITO)/Ag contact scheme. Specific contact resistivity as low as 3.2x10(-5) Omega cm(2) was obtained from Ni(20Angstrom)/Au (30Angstrom)/ITO (600 Angstrom)/Ag (1200 Angstrom) contact annealed at 500degreesC under an oxidizing ambient. The relative reflectance of contact was evaluated to be 78.8%, which is 14.6% higher than the Ni/Au contact. The ITO layer acted as a diffusion barrier for both indiffusion of Ag and out-diffusion of Au, providing a low resistant and highly reflective ohmic contact on p-type GaN. (C) 2004 The Electrochemical Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Highly reflective and low-resistant Ni/Au/ITO/Ag ohmic contact on p-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1149/1.1676115 | - |
dc.author.google | Kim, SY | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 7 | en_US |
dc.relation.issue | 5 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.5, pp.G102 - G104 | - |
dc.identifier.wosid | 000220130100020 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | G104 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | G102 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 7 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-2342592591 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 29 | - |
dc.description.scptc | 33 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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