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Cited 39 time in webofscience Cited 40 time in scopus
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dc.contributor.authorPark, YD-
dc.contributor.authorCho, JH-
dc.contributor.authorKim, DH-
dc.contributor.authorJang, Y-
dc.contributor.authorLee, HS-
dc.contributor.authorIhm, K-
dc.contributor.authorKang, TH-
dc.contributor.authorCho, K-
dc.date.accessioned2015-06-25T01:50:45Z-
dc.date.available2015-06-25T01:50:45Z-
dc.date.created2009-08-25-
dc.date.issued2006-01-
dc.identifier.issn1099-0062-
dc.identifier.other2015-OAK-0000006217en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10114-
dc.description.abstractThe electronic structures of the interfaces between Au and poly(3-hexylthiophene) (P3HT) films with two different molecular orientations and orderings were investigated using synchrotron radiation photoemission spectroscopy. We found that, depending on whether thermal treatment was used, the P3HT thin film adopts two different molecular orientations, parallel and perpendicular to the silicon substrate, which result in different values of the vacuum level shift and hole-injection barrier. Thus, the molecular orientation and ordering of the P3HT material strongly affect the energy level alignment at the P3HT/Au interface. (c) 2006 The Electrochemical Society.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.relation.isPartOfELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleEnergy-level alignment at interfaces between gold and poly(3-hexylthiophene) films with two different molecular structures-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1149/1.2337862-
dc.author.googlePark, YDen_US
dc.author.googleCho, JHen_US
dc.author.googleCho, Ken_US
dc.author.googleKang, THen_US
dc.author.googleIhm, Ken_US
dc.author.googleLee, HSen_US
dc.author.googleJang, Yen_US
dc.author.googleKim, DHen_US
dc.relation.volume9en_US
dc.relation.issue11en_US
dc.contributor.id10077904en_US
dc.relation.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.11, pp.G317 - G319-
dc.identifier.wosid000240500600019-
dc.date.tcdate2019-01-01-
dc.citation.endPageG319-
dc.citation.number11-
dc.citation.startPageG317-
dc.citation.titleELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.citation.volume9-
dc.contributor.affiliatedAuthorCho, K-
dc.identifier.scopusid2-s2.0-33748685418-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc39-
dc.description.scptc40*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusSELF-ASSEMBLED MONOLAYERS-
dc.subject.keywordPlusFIELD-EFFECT MOBILITY-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusPENTACENE-
dc.subject.keywordPlusINJECTION-
dc.subject.keywordPlusCHARGE-
dc.subject.keywordPlusPHOTOEMISSION-
dc.subject.keywordPlusENHANCEMENT-
dc.subject.keywordPlusMETAL-
dc.relation.journalWebOfScienceCategoryElectrochemistry-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaElectrochemistry-
dc.relation.journalResearchAreaMaterials Science-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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