DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Lee, S | - |
dc.contributor.author | Ryu, SW | - |
dc.contributor.author | Son, JH | - |
dc.contributor.author | Song, YH | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:51:46Z | - |
dc.date.available | 2015-06-25T01:51:46Z | - |
dc.date.created | 2009-10-08 | - |
dc.date.issued | 2009-01 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.other | 2015-OAK-0000019158 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10131 | - |
dc.description.abstract | We investigate interfacial band bendings in Al ohmic contacts to laser-irradiated Ga-face and N-face n-GaN using synchrotron radiation photoemission spectroscopy. Both samples show increased band bendings after annealing at 300 degrees C, but annealing at 500 degrees C leads to completely opposite band bendings. These two different behaviors with annealing temperature are consistent with electrical properties of the contacts and are well explained by the annihilation of N vacancies at the interface and the formation of polarization-induced sheet charges at AlN/GaN heterointerfaces, respectively. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Interfacial Band Bendings in Al Ohmic Contacts to Laser-Irradiated Ga-Face and N-Face n-GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1149/1.3206916 | - |
dc.author.google | Jang, HW | en_US |
dc.author.google | Lee, S | en_US |
dc.author.google | Lee, JL | en_US |
dc.author.google | Song, YH | en_US |
dc.author.google | Son, JH | en_US |
dc.author.google | Ryu, SW | en_US |
dc.relation.volume | 12 | en_US |
dc.relation.issue | 11 | en_US |
dc.relation.startpage | 405 | en_US |
dc.relation.lastpage | 407 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.11, pp.405 - 407 | - |
dc.identifier.wosid | 000269723600018 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 407 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 405 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 12 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-70249135597 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | METAL CONTACTS | - |
dc.subject.keywordPlus | TI/AL CONTACTS | - |
dc.subject.keywordAuthor | aluminium compounds | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | ohmic contacts | - |
dc.subject.keywordAuthor | photoelectron spectra | - |
dc.subject.keywordAuthor | semiconductor heterojunctions | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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