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dc.contributor.authorLee, Yongjeong-
dc.contributor.authorAhn, Yunho-
dc.contributor.authorJUNG, SUNGYEOP-
dc.contributor.authorHorowitz, Gilles-
dc.contributor.authorBonnassieux, Yvan-
dc.date.accessioned2020-04-04T14:58:57Z-
dc.date.available2020-04-04T14:58:57Z-
dc.date.created2020-04-02-
dc.date.issued2019-06-26-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/102351-
dc.publisherHASSELT UNIVERSITY-
dc.relation.isPartOfInternational Conference on Organic Electronics (ICOE)-
dc.relation.isPartOfInternational Conference on Organic Electronics (ICOE)-
dc.titleOrigin of Threshold Voltage in Organic Transistor: Intrinsic and Extrinsic Factors-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationInternational Conference on Organic Electronics (ICOE)-
dc.citation.conferenceDate2019-06-24-
dc.citation.conferencePlaceBE-
dc.citation.titleInternational Conference on Organic Electronics (ICOE)-
dc.contributor.affiliatedAuthorJUNG, SUNGYEOP-
dc.description.journalClass1-
dc.description.journalClass1-

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