Graphene for CMOS and Beyond CMOS Applications
SCIE
SCOPUS
- Title
- Graphene for CMOS and Beyond CMOS Applications
- Authors
- KIM, SEYOUNG
- Date Issued
- 2010-12
- Publisher
- Institute of Electrical and Electronics Engineers
- Abstract
- Owing in part to complementary metal-oxide-semiconductor (CMOS) scaling issues, the semiconductor industry is placing an increased emphasis on emerging materials and devices that may provide a solution beyond the 22-nm node. Single and few layers of carbon sheets (graphene) have been fabricated by a variety of techniques including mechanical exfoliation and chemical vapor deposition, and field-effect devices have been demonstrated with room temperature field-effect mobilities close to 10 000 cm 2 /Vs. But since graphene is a gapless semiconductor, these transistors have high off-state leakage and nonsaturating drive currents. This is problematic for digital logic, but is acceptable for analog device applications such as low-noise amplifiers and radio-frequency (RF)/millimeter-wave field-effect transistors (FETs). The remarkable transport physics of graphene due to its linear bandstructure have led to novel beyond CMOS logic devices as well, such as “pseudospin” devices.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/103398
- DOI
- 10.1109/JPROC.2010.2064151
- ISSN
- 0018-9219
- Article Type
- Article
- Citation
- Proceedings of the IEEE, vol. 98, no. 12, page. 2032 - 2046, 2010-12
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