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Analysis of Positive Bias Temperature Instability Degradation in n+ and p+ poly-Si Gates of High-Voltage SiO2 Dielectric nMOSFETs
- Title
- Analysis of Positive Bias Temperature Instability Degradation in n+ and p+ poly-Si Gates of High-Voltage SiO2 Dielectric nMOSFETs
- Authors
- KANG, BONG KOO; Yeohyeok Yun; Ji-Hoon Seo
- Date Issued
- 2019-11-19
- Publisher
- IWDTF 2019
- Article Type
- Conference
- Citation
- IWDTF 2019, 2019-11-19
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Related Researcher
- 강봉구KANG, BONG KOO
- Dept of Electrical Enginrg