SI, BE, AND C ION IMPLANTATION IN GAAS0.93P0.07

Abstract

The activation efficiencies of implanted Si, Be, and C in GaAs0.93P0.07 have been measured in the annealing range 650-950 degrees C. Be provides much higher sheet hole densities than C, even when the latter is coimplanted with Ar to enhance the electrical activity. The maximum activation efficiency of Be is similar to 60% at a close of 5X10(14) cm(2) whereas that of C is an order of magnitude lower, Si produces donor activation percentages up to similar to 20% under optimized annealing conditions. Capless proximity annealing is adequate for surface preservation up to similar to 950 degrees C as measured by scanning electron microscopy and atomic force microscopy. Photoluminescence measurements provide evidence that nonradiative, damage-related point defects remain in the GaAsP even after annealing or 950 degrees C. (C) 1996 American Institute of Physics.