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Cited 19 time in webofscience Cited 19 time in scopus
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dc.contributor.authorKim, SS-
dc.contributor.authorKang, TS-
dc.contributor.authorJe, JH-
dc.date.accessioned2015-06-25T02:11:07Z-
dc.date.available2015-06-25T02:11:07Z-
dc.date.created2009-02-28-
dc.date.issued2001-11-01-
dc.identifier.issn0021-8979-
dc.identifier.other2015-OAK-0000002262en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10499-
dc.description.abstractMicrostructural changes in epitaxial SrRuO3 thin films grown on SrTiO3(001) during the early stages of growth by pulsed laser deposition were studied using synchrotron x ray scattering. We find that at a very early stage of growth (less than or equal to 110 Angstrom), the film is composed of a single (110) domain only, in sharp contrast to double (110) domains reported previously for thick (greater than or equal to 1000 Angstrom) films. As the film grows further (> 110 Angstrom), another, 90 degrees rotated, (110) domain starts to form, coexisting with the original (110) domain. This domain evolution is attributed to strain relaxation, eventually resulting in significant atomic ordering in the in-plane direction. (C) 2001 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleStructural evolution of epitaxial SrRuO3 thin films grown on SrTiO3(001)-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.1405135-
dc.author.googleKim, SSen_US
dc.author.googleKang, TSen_US
dc.author.googleJe, JHen_US
dc.relation.volume90en_US
dc.relation.issue9en_US
dc.relation.startpage4407en_US
dc.relation.lastpage4410en_US
dc.contributor.id10123980en_US
dc.relation.journalJOURNAL OF APPLIED PHYSICSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.90, no.9, pp.4407 - 4410-
dc.identifier.wosid000171594800014-
dc.date.tcdate2019-01-01-
dc.citation.endPage4410-
dc.citation.number9-
dc.citation.startPage4407-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume90-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-0035504717-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc18-
dc.type.docTypeArticle-
dc.subject.keywordPlusMETALLIC OXIDE SRRUO3-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusMAGNETIC-ANISOTROPY-
dc.subject.keywordPlusDOMAIN-STRUCTURE-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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