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Cited 6 time in webofscience Cited 6 time in scopus
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dc.contributor.authorKim, SS-
dc.contributor.authorSeong, TY-
dc.contributor.authorKim, HS-
dc.contributor.authorJe, JH-
dc.date.accessioned2015-06-25T02:11:36Z-
dc.date.available2015-06-25T02:11:36Z-
dc.date.created2009-02-28-
dc.date.issued2002-10-15-
dc.identifier.issn0021-8979-
dc.identifier.other2015-OAK-0000002919en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10508-
dc.description.abstractHeteroepitaxial growth behavior of SrRuO3/SrTiO3(001) thin films during early stages by pulsed laser deposition was investigated using synchrotron x-ray scattering, atomic force microscopy, and high-resolution transmission electron microscopy. We find that three-dimensional (3D) SrRuO3(110) islands of similar to1500 Angstrom in diameter grow at an initial stage of growth (30 Angstrom in thickness), in contrast to the two-dimensional layer growth previously reported in thick (3000 Angstrom) films by off-axis sputtering. Interestingly, the 3D islands are coherently strained to the substrate, possessing a very narrow mosaic distribution of 0.007degrees half width at half maximum. On top of the existing well-aligned islands, poorly aligned 3D islands of much smaller sizes progressively grow, reducing the interfacial strain while maintaining the small surface roughness of 9 Angstrom up to the film thickness of 420 Angstrom. (C) 2002 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleHeteroepitaxial growth behavior of SrRuO3/SrTiO3(001) by pulsed laser deposition-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.1505978-
dc.author.googleKim, SSen_US
dc.author.googleSeong, TYen_US
dc.author.googleJe, JHen_US
dc.author.googleKim, HSen_US
dc.relation.volume92en_US
dc.relation.issue8en_US
dc.relation.startpage4820en_US
dc.relation.lastpage4824en_US
dc.contributor.id10123980en_US
dc.relation.journalJOURNAL OF APPLIED PHYSICSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.92, no.8, pp.4820 - 4824-
dc.identifier.wosid000178318000094-
dc.date.tcdate2019-01-01-
dc.citation.endPage4824-
dc.citation.number8-
dc.citation.startPage4820-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume92-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-18744362989-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc6-
dc.description.scptc6*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusSRRUO3 THIN-FILMS-
dc.subject.keywordPlusMETALLIC OXIDE SRRUO3-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusMAGNETIC-ANISOTROPY-
dc.subject.keywordPlusDOMAIN-STRUCTURE-
dc.subject.keywordPlusEVOLUTION-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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