DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, CC | - |
dc.contributor.author | Je, JH | - |
dc.contributor.author | Ruterana, P | - |
dc.contributor.author | Degave, F | - |
dc.contributor.author | Nouet, G | - |
dc.contributor.author | Yi, MS | - |
dc.contributor.author | Noh, DY | - |
dc.contributor.author | Hwu, Y | - |
dc.date.accessioned | 2015-06-25T02:12:06Z | - |
dc.date.available | 2015-06-25T02:12:06Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2002-04-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2015-OAK-0000002551 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10518 | - |
dc.description.abstract | We investigated the structural evolution of GaN nucleation layers in the initial growth stages on commercial c-plane sapphires with atomic steps at the surface, using field-emission scanning electron microscopy, synchrotron x-ray scattering, and high-resolution electron microscopy. GaN nucleates into islands preferentially on the atomic steps. The initial small islands of 25 A high have well-ordered cubic sequences and nearly coherent interfacial structures with a large compressive strain of similar to10%. As the islands grow to 50 A high, the strain is drastically reduced, to less than 1%, by generating misfit dislocations at the interface and forming the six-to-seven matched interfacial structure. Interestingly, stacking faults are developed from the GaN/sapphire interface, which induces a cubic-hexagonal transformation. The changes in the stacking order during the initial growth are investigated quantitatively. (C) 2002 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Microstructures of GaN islands on a stepped sapphire surface | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1459607 | - |
dc.author.google | Kim, CC | en_US |
dc.author.google | Je, JH | en_US |
dc.author.google | Hwu, Y | en_US |
dc.author.google | Noh, DY | en_US |
dc.author.google | Yi, MS | en_US |
dc.author.google | Nouet, G | en_US |
dc.author.google | Degave, F | en_US |
dc.author.google | Ruterana, P | en_US |
dc.relation.volume | 91 | en_US |
dc.relation.issue | 7 | en_US |
dc.relation.startpage | 4233 | en_US |
dc.relation.lastpage | 4237 | en_US |
dc.contributor.id | 10123980 | en_US |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.91, no.7, pp.4233 - 4237 | - |
dc.identifier.wosid | 000174663900042 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 4237 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 4233 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 91 | - |
dc.contributor.affiliatedAuthor | Je, JH | - |
dc.identifier.scopusid | 2-s2.0-0036536634 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 10 | - |
dc.description.scptc | 9 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | BUFFER LAYER | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | DIODES | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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