DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T02:13:01Z | - |
dc.date.available | 2015-06-25T02:13:01Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2003-05-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2015-OAK-0000003339 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10537 | - |
dc.description.abstract | Low-resistance, high-transparency, and thermally stable Ohmic contacts on p-type GaN were achieved using Ru and Ir. Oxidation annealing under O-2 atmosphere led to the reduction of contact resistivity by greater than one order of magnitude, compared to annealing under N-2. The bilayer contacts of Ru (50 Angstrom)/Ni (50 Angstrom) and Ir (50 Angstrom)/Ni (50 Angstrom) exhibited a low contact resistivity of similar to4x10(-5) Omega cm(2) and high light transmittance of similar to85% after annealing at 500 degreesC for 1 min under O-2. The barrier height for hole injection could decrease via contact formation of RuO2 (or IrO2) on p-type GaN. The Au-free contact structure of NiO/RuO2 (IrO2)/GaN led to high light transmittance and good thermal stability. (C) 2003 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Transparent ohmic contacts of oxidized Ru and Ir on p-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.1565494 | - |
dc.author.google | Jang, HW | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 93 | en_US |
dc.relation.issue | 9 | en_US |
dc.relation.startpage | 5416 | en_US |
dc.relation.lastpage | 5421 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.93, no.9, pp.5416 - 5421 | - |
dc.identifier.wosid | 000182296700066 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 5421 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 5416 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 93 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0038663029 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 29 | - |
dc.description.scptc | 33 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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