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Cited 4 time in webofscience Cited 5 time in scopus
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dc.contributor.authorKim, HK-
dc.contributor.authorJang, HW-
dc.contributor.authorLee, JL-
dc.date.accessioned2015-06-25T02:13:39Z-
dc.date.available2015-06-25T02:13:39Z-
dc.date.created2009-02-28-
dc.date.issued2005-11-15-
dc.identifier.issn0021-8979-
dc.identifier.other2015-OAK-0000005541en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10557-
dc.description.abstractThe effects of Au nanoparticles on the electronic properties of a GaN surface were investigated using synchrotron radiation photoelectron spectroscopy (SRPES). A 30-A-thick Au film on GaN was transformed to nanoparticles by annealing at 300 degrees C. Ga 3d core level peak as well as Au 4f for p-GaN shifted towards higher binding energies with the formation of Au nanoparticles, while peak shifts in the SRPES spectra for n-GaN were negligible. Poor conductivity of the p-GaN substrate and high resistance between Au nanoparticles and the p-GaN led to positive charges being distributed on the p-GaN surface, suggesting that Au nanoparticles on p-GaN strongly affect the evaluation of surface band bending and the measurement of Schottky barrier heights by photoemission spectroscopy. (c) 2005 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titlePhotoemission-induced charging of self-assembled Au nanoparticles on GaN substrates and the effect on surface band bending-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.2133905-
dc.author.googleKim, HKen_US
dc.author.googleJang, HWen_US
dc.author.googleLee, JLen_US
dc.relation.volume98en_US
dc.relation.issue10en_US
dc.contributor.id10105416en_US
dc.relation.journalJOURNAL OF APPLIED PHYSICSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.98, no.10-
dc.identifier.wosid000233602600069-
dc.date.tcdate2019-01-01-
dc.citation.number10-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume98-
dc.contributor.affiliatedAuthorLee, JL-
dc.identifier.scopusid2-s2.0-28644433734-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc4-
dc.description.scptc5*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusGOLD NANOPARTICLES-
dc.subject.keywordPlusOHMIC CONTACT-
dc.subject.keywordPlusMETAL-
dc.subject.keywordPlusCHEMISTRY-
dc.subject.keywordPlusCLUSTERS-
dc.subject.keywordPlusNI/AU-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
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