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Cited 3 time in webofscience Cited 3 time in scopus
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dc.contributor.authorLee, HJ-
dc.contributor.authorJeong, SY-
dc.contributor.authorCho, CR-
dc.contributor.authorLee, JH-
dc.contributor.authorJoo, SJ-
dc.contributor.authorShin, KH-
dc.contributor.authorLee, BC-
dc.contributor.authorKim, TS-
dc.contributor.authorPark, JH-
dc.contributor.authorKang, JS-
dc.contributor.authorRhie, K-
dc.date.accessioned2015-06-25T02:14:07Z-
dc.date.available2015-06-25T02:14:07Z-
dc.date.created2009-02-28-
dc.date.issued2005-02-01-
dc.identifier.issn0021-8979-
dc.identifier.other2015-OAK-0000004836en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10572-
dc.description.abstractMagnetic tunnel junction ( MTJ) structures were investigated by x-ray photoelectron spectroscopy. The Al layer was overoxidized and the samples were treated by rapid thermal annealing. It was found that the Mn atoms in the exchange-bias layer diffused into the magnetic layer, but did not reach the oxide barrier. Although slightly higher oxygen concentration was observed at the interface between the magnetic layer and the oxide barrier, strong evidence of the oxidized magnetic-layer interface was not found. Our result is consistent with the high tunneling magnetoresistance of MTJs at room temperature. (C) 2005 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleX-ray photoelectron spectroscopy study of magnetic tunnel junctions-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1063/1.1836853-
dc.author.googleLee, HJen_US
dc.author.googleJeong, SYen_US
dc.author.googleRhie, Ken_US
dc.author.googleKang, JSen_US
dc.author.googlePark, JHen_US
dc.author.googleKim, TSen_US
dc.author.googleLee, BCen_US
dc.author.googleShin, KHen_US
dc.author.googleJoo, SJen_US
dc.author.googleLee, JHen_US
dc.author.googleCho, CRen_US
dc.relation.volume97en_US
dc.relation.issue3en_US
dc.contributor.id10080407en_US
dc.relation.journalJOURNAL OF APPLIED PHYSICSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.97, no.3-
dc.identifier.wosid000226778300050-
dc.date.tcdate2019-01-01-
dc.citation.number3-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume97-
dc.contributor.affiliatedAuthorPark, JH-
dc.identifier.scopusid2-s2.0-13644278647-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc3-
dc.description.scptc2*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlus300 DEGREES-C-
dc.subject.keywordPlusTHERMAL-STABILITY-
dc.subject.keywordPlusTEMPERATURE-DEPENDENCE-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusOXIDATION-
dc.subject.keywordPlusBARRIERS-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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