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Cited 17 time in webofscience Cited 20 time in scopus
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dc.contributor.authorGutkin, MY-
dc.contributor.authorSheinerman, AG-
dc.contributor.authorArgunova, TS-
dc.contributor.authorYi, JM-
dc.contributor.authorKim, MU-
dc.contributor.authorJe, JH-
dc.contributor.authorNagalyuk, SS-
dc.contributor.authorMokhov, EN-
dc.contributor.authorMargaritondo, G-
dc.contributor.authorHwu, Y-
dc.date.accessioned2015-06-25T02:14:16Z-
dc.date.available2015-06-25T02:14:16Z-
dc.date.created2009-02-28-
dc.date.issued2006-11-01-
dc.identifier.issn0021-8979-
dc.identifier.other2015-OAK-0000006367en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10577-
dc.description.abstractSynchrotron phase sensitive radiography, optical and scanning electron microscopies, and color photoluminescence have been used to study the interaction of micropipes with foreign polytype inclusions in 4H-SiC bulk crystals grown on 6H-SiC substrates. This combination of techniques confirms that micropipes agglomerate at the polytype inclusions and merge into pores. A mechanism for this phenomenon is suggested based on a three-dimensional theoretical model; the inclusion boundaries elastically interact with micropipes, causing them to migrate from the bulk to their equilibrium positions at the polytype boundaries. The turning of micropipes towards the inclusions is experimentally demonstrated, and the reduction of their density in nearby regions is revealed. Supported by experimental observations, our model helps to understand the pore formation and expansion in SiC bulk crystals. (c) 2006 American Institute of Physics.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleInteraction of micropipes with foreign polytype inclusions in SiC-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.2359686-
dc.author.googleGutkin, MYen_US
dc.author.googleSheinerman, AGen_US
dc.author.googleJe, JHen_US
dc.author.googleKim, MUen_US
dc.author.googleYi, JMen_US
dc.author.googleArgunova, TSen_US
dc.relation.volume100en_US
dc.relation.issue9en_US
dc.contributor.id10123980en_US
dc.relation.journalJOURNAL OF APPLIED PHYSICSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.100, no.9-
dc.identifier.wosid000242041500031-
dc.date.tcdate2019-01-01-
dc.citation.number9-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume100-
dc.contributor.affiliatedAuthorJe, JH-
dc.identifier.scopusid2-s2.0-33751105216-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc12-
dc.description.scptc11*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTRONIC DEVICE APPLICATIONS-
dc.subject.keywordPlus4H-SIC SCHOTTKY DIODES-
dc.subject.keywordPlusCARBIDE BULK CRYSTALS-
dc.subject.keywordPlusBEAM-INDUCED CURRENT-
dc.subject.keywordPlusSILICON-CARBIDE-
dc.subject.keywordPlusSUBLIMATION GROWTH-
dc.subject.keywordPlusDEFECT CHARACTERIZATION-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusCOMPUTER-SIMULATION-
dc.subject.keywordPlusSINGLE-CRYSTALS-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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