Programmed Band Gap Modulation within Van Der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy
- Title
- Programmed Band Gap Modulation within Van Der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy
- Authors
- JO, MOON HO; LEECHANGSOO; GANGTAE, JIN; SEO, SEUNGYOUNG; JUHO, KIM; CHEOLHEE, HAN; PARK, MIN YOUNG; AHN, HEON SU; LEE, SUK HO; Soonyoung Cha
- Date Issued
- 2020-11-03
- Publisher
- The Korean Institute of Metals and Materials
- Abstract
- Programmed alloying within a van der Waals (vdW) semiconductor monolayer (ML) is achieved by metalorganic vapor-phase epitaxy. Specifically, two versions of on-ML alloying are demonstrated by precise controls of time-lapse vapor pressures during the single-crystalline WS2xSe2(1–x) ML growth, where the alloying degree, x, is either continuously or discretely directed on the MLs in the entire range of 0 ≤ x ≤ 1. With this, on-ML band gap modulation is accomplished in the forms of either graded or discrete intra-ML junctions, leading to atomically thin multispectral photodetectors by a spatially resolved manner at the nanoscales.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/105783
- Article Type
- Conference
- Citation
- ENGE2020, 2020-11-03
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- There are no files associated with this item.
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