Physical and electrical characterizations of ultrathin Si-rich Hf-silicate film and Hf-silicate/SiO2 bilayer deposited by atomic layer chemical vapor deposition
SCIE
SCOPUS
- Title
- Physical and electrical characterizations of ultrathin Si-rich Hf-silicate film and Hf-silicate/SiO2 bilayer deposited by atomic layer chemical vapor deposition
- Authors
- Kim, J; Yong, K
- Date Issued
- 2006-08-15
- Publisher
- AMER INST PHYSICS
- Abstract
- Hf-silicate films and Hf-silicate/SiO2 bilayers were fabricated on Si(100) to study SiO2 buffer layer effects. Hf-silicate layers were grown by atomic layer chemical vapor deposition using alternate supply of tetrakis-diethylamido-hafnium (Hf[N(C2H5)(2)](4)) and tetra-n-butyl-orthosilicate [Si((OBu)-Bu-n)(4)] precursors. Ultrathin SiO2 buffer layers effectively suppressed Hf-rich phases and dislocations found at Hf-silicate/Si interfaces in Hf-silicate samples. These effects resulted in the significantly improved electrical properties of bilayers, compared to Hf-silicate films, such as low leakage current density (J(g)), low flatband voltage (V-fb) shift, and high breakdown voltage (V-BD). (c) 2006 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10582
- DOI
- 10.1063/1.2234823
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 100, no. 4, page. 44106-1 - 44106-5, 2006-08-15
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