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dc.contributor.authorAN, JEHYUN-
dc.contributor.authorCHOI, KYEONG KEUN-
dc.contributor.authorKANG, BOHYEON-
dc.contributor.authorBAEK, ROCK HYUN-
dc.date.accessioned2021-06-01T09:55:08Z-
dc.date.available2021-06-01T09:55:08Z-
dc.date.created2021-03-04-
dc.date.issued2020-07-01-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/106213-
dc.languageEnglish-
dc.publisherNANO KOREA-
dc.relation.isPartOfThe 18th International Nanotech Symposium & Exhibition-
dc.relation.isPartOfThe 18th International Nanotech Symposium & Exhibition-
dc.titleInterface trap curing effects on high-k gate stack (Al/Al2O3/Si-sub) by rapid thermal anneal (RTA)-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitationThe 18th International Nanotech Symposium & Exhibition-
dc.citation.conferenceDate2020-07-01-
dc.citation.conferencePlaceKO-
dc.citation.conferencePlace경기도 고양시 KINTEX 제1전시장(온라인학회)-
dc.citation.titleThe 18th International Nanotech Symposium & Exhibition-
dc.contributor.affiliatedAuthorAN, JEHYUN-
dc.contributor.affiliatedAuthorCHOI, KYEONG KEUN-
dc.contributor.affiliatedAuthorKANG, BOHYEON-
dc.contributor.affiliatedAuthorBAEK, ROCK HYUN-
dc.description.journalClass1-
dc.description.journalClass1-

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백록현BAEK, ROCK HYUN
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