DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wonseok Lee | - |
dc.contributor.author | Min-Ho Kim, | - |
dc.contributor.author | Di Zhu | - |
dc.contributor.author | Ahmed N. Noemaun | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Schubert, EF | - |
dc.date.accessioned | 2015-06-25T02:15:58Z | - |
dc.date.available | 2015-06-25T02:15:58Z | - |
dc.date.created | 2010-08-07 | - |
dc.date.issued | 2010-03-15 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2015-OAK-0000021426 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10632 | - |
dc.description.abstract | We demonstrate GaInN multiple quantum well (MQW) light-emitting diodes (LEDs) having ternary GaInN quantum barriers (QBs) instead of conventional binary GaN QBs for a reduced polarization mismatch between QWs and QBs and an additional separate confinement of carriers to the MQW active region. In comparison with GaInN LEDs with conventional GaN QBs, the GaInN/GaInN LEDs show a reduced blueshift of the peak wavelength with increasing injection current and a reduced forward voltage. In addition, we investigate the density of pits emerging on top of the MQW layer that are correlated with V-defects and act as a path for the reverse leakage current. The GaInN/GaInN MQW structure has a lower pit density than the GaInN/GaN MQW structure as well as a lower reverse leakage current. Finally, the GaInN/GaInN MQW LEDs show higher light output power and external quantum efficiency at high injection currents compared to the conventional GaInN/GaN MQW LEDs. We attribute these results to the reduced polarization mismatch and the reduced lattice mismatch in the GaInN/GaInN MQW active region. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AIP | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.3327425 | - |
dc.author.google | Lee, W | en_US |
dc.author.google | Kim, MH | en_US |
dc.author.google | Schubert, EF | en_US |
dc.author.google | Kim, JK | en_US |
dc.author.google | Noemaun, AN | en_US |
dc.author.google | Zhu, D | en_US |
dc.relation.volume | 107 | en_US |
dc.relation.issue | 6 | en_US |
dc.relation.startpage | 63102 | en_US |
dc.contributor.id | 10100864 | en_US |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.107, no.6, pp.63102 | - |
dc.identifier.wosid | 000276210800010 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 63102 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 107 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-77950571870 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 22 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LEAKAGE CURRENT | - |
dc.subject.keywordPlus | BLUE | - |
dc.subject.keywordPlus | DISLOCATIONS | - |
dc.subject.keywordPlus | CENTERS | - |
dc.subject.keywordPlus | ORIGIN | - |
dc.subject.keywordAuthor | charge injection | - |
dc.subject.keywordAuthor | crystal defects | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | indium compounds | - |
dc.subject.keywordAuthor | leakage currents | - |
dc.subject.keywordAuthor | light emitting diodes | - |
dc.subject.keywordAuthor | quantum well devices | - |
dc.subject.keywordAuthor | semiconductor growth | - |
dc.subject.keywordAuthor | semiconductor quantum wells | - |
dc.subject.keywordAuthor | vanadium | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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