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dc.contributor.authorYou, CY-
dc.contributor.authorHan, JH-
dc.contributor.authorLee, HW-
dc.date.accessioned2015-06-25T02:16:30Z-
dc.date.available2015-06-25T02:16:30Z-
dc.date.created2014-03-05-
dc.date.issued2012-04-01-
dc.identifier.issn0021-8979-
dc.identifier.other2015-OAK-0000026765en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/10649-
dc.description.abstractWe investigate the spin transfer torque (STT) with multi-orbit tight binding model in the magnetic tunneling junctions (MTJs). So far, most of the theoretical works based on the non-equilibrium Keldysh Green's function method employ a single band model for the simplicity, except a few first principle studies. Even though the single band model captures main physics of STT in MTJ, multi-band calculation reveals new features of the STT that depend on band parameters, such as insulator bandgap, inter-band hopping energy of the ferromagnetic layer. We find that the sign change of perpendicular torkance with bandgap of the insulator layer, and when we allow the inter-band hopping, the bias dependences of perpendicular STT are dramatically changed, while no noticeable changes in parallel STT are found. (C) 2012 American Institute of Physics. [doi:10.1063/1.3671773]-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfJournal of Applied Physics-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleMulti-orbital tight binding calculations for spin transfer torque in magnetic tunneling junctions-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1063/1.3671773-
dc.author.googleYou, CYen_US
dc.author.googleHan, JHen_US
dc.author.googleLee, HWen_US
dc.relation.volume111en_US
dc.relation.issue7en_US
dc.relation.startpage07C904en_US
dc.contributor.id10084423en_US
dc.relation.journalJournal of Applied Physicsen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationJournal of Applied Physics, v.111, no.7, pp.7C904-
dc.identifier.wosid000303282401094-
dc.date.tcdate2018-03-23-
dc.citation.number7-
dc.citation.startPage7C904-
dc.citation.titleJournal of Applied Physics-
dc.citation.volume111-
dc.contributor.affiliatedAuthorLee, HW-
dc.identifier.scopusid2-s2.0-84861736940-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.scptc0*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusVOLTAGE-DEPENDENCE-
dc.subject.keywordPlusMGO-
dc.subject.keywordPlusAL2O3-
dc.subject.keywordPlusCAO-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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