DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jin, B | - |
dc.contributor.author | Daegun Kang | - |
dc.contributor.author | Jungsik Kim | - |
dc.contributor.author | Meyya Meyyappan | - |
dc.contributor.author | Jeong-Soo Lee | - |
dc.date.accessioned | 2015-06-25T02:16:43Z | - |
dc.date.available | 2015-06-25T02:16:43Z | - |
dc.date.created | 2013-05-30 | - |
dc.date.issued | 2013-04-28 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | 2015-OAK-0000027613 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/10656 | - |
dc.description.abstract | The electrical characteristics of nonvolatile In2Se3 nanowire phase change memory are reported. Size-dependent memory switching behavior was observed in nanowires of varying diameters and the reduction in set/reset threshold voltage was as low as 3.45 V/6.25V for a 60 nm nanowire, which is promising for highly scalable nanowire memory applications. Also, size-dependent thermal resistance of In2Se3 nanowire memory cells was estimated with values as high as 5.86 x 10(13) and 1.04 x 10(6) K/W for a 60 nm nanowire memory cell in amorphous and crystalline phases, respectively. Such high thermal resistances are beneficial for improvement of thermal efficiency and thus reduction in programming power consumption based on Fourier's law. The evaluation of thermal resistance provides an avenue to develop thermally efficient memory cell architecture. (C) 2013 AIP Publishing LLC | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AIP Publishing | - |
dc.relation.isPartOf | Journal of Applied Physics | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Thermally efficient and highly scalable In2Se3 nanowire phase change memory | - |
dc.type | Article | - |
dc.contributor.college | 정보전자융합공학부 | en_US |
dc.identifier.doi | 10.1063/1.4802672 | - |
dc.author.google | Jin B., Kang D., Kim J., Meyyappan M., Lee J.-S. | en_US |
dc.relation.volume | 113 | en_US |
dc.relation.issue | 16 | en_US |
dc.relation.startpage | 164303-1 | en_US |
dc.relation.lastpage | 164303-6 | en_US |
dc.contributor.id | 10084860 | en_US |
dc.relation.journal | Journal of Applied Physics | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Journal of Applied Physics, v.113, no.16, pp.164303-1 - 164303-6 | - |
dc.identifier.wosid | 000318550300053 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 164303-6 | - |
dc.citation.number | 16 | - |
dc.citation.startPage | 164303-1 | - |
dc.citation.title | Journal of Applied Physics | - |
dc.citation.volume | 113 | - |
dc.contributor.affiliatedAuthor | Jin, B | - |
dc.contributor.affiliatedAuthor | Meyya Meyyappan | - |
dc.contributor.affiliatedAuthor | Jeong-Soo Lee | - |
dc.identifier.scopusid | 2-s2.0-84877304186 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 10 | - |
dc.description.scptc | 8 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MELTING TEMPERATURE | - |
dc.subject.keywordPlus | CELL | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | GE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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