Operation Principles of ZnO/Al2O3-AlDMP/ZnO Stacked-Channel Ternary Thin-Film Transistor

Abstract

For many decades, novel devices demonstrating step-wise current–voltage characteristic at room temperature have been pursued to realize multi-valued logic computing that has significant advantages such as extremely low power consumption and high-density information-processing capability. Recently, a novel ternary logic transistor has been constructed using an ultrathin ZnO/Al