Post-deposition dipping method for improving the electronic properties of a narrow bandgap conjugated polymer
SCIE
SCOPUS
- Title
- Post-deposition dipping method for improving the electronic properties of a narrow bandgap conjugated polymer
- Authors
- Park, YD; Park, JK; Lee, WH; Kang, B; Cho, K; Bazan, GC
- Date Issued
- 2012-04
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- By dipping into hexane, it is possible to efficiently eliminate the low MW component and also improve the molecular ordering of a conjugated polymer thin film. These changes improve the performance of field-effect transistors. The correlation between the nanoscalar structural features and the electrical properties enables us to determine both the appropriate dipping time and how the low MW component influences electronic properties.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10958
- DOI
- 10.1039/C2JM31183F
- ISSN
- 0959-9428
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, vol. 22, no. 23, page. 11462 - 11465, 2012-04
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.