DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, HU | - |
dc.contributor.author | Rhee, SW | - |
dc.date.accessioned | 2015-06-25T02:30:35Z | - |
dc.date.available | 2015-06-25T02:30:35Z | - |
dc.date.created | 2009-03-16 | - |
dc.date.issued | 2000-04 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.other | 2015-OAK-0000010212 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11098 | - |
dc.description.abstract | Silicon oxide films have been deposited with chemical vapor deposition from TEOS/O-3 at low temperature below 400 degrees C for the gate insulator of thin-film transistors. The electrical properties of the bulk silicon oxide film and the SiO2/Si interface were investigated as a function of process parameters such as deposition temperature and TEOS/O-3 ratio using capacitance-voltage and current-voltage measurements. The breakdown strength increased and the leakage current decreased as the deposition temperature increased, but both were not significantly dependent on the TEOS/O-3 ratio. The breakdown strength of the film deposited at 380 degrees C was about 5 MV/cm. As the deposition temperature increased, the interface trap density (D-it) at Si midgap was almost constant, but D-it near E-v + 0.25 eV and E-v + 0.75 eV, which is the P-b center, decreased. The interface trap density was lowest when the TEOS/O-3 ratio was 0.35. It was confirmed that the deposition temperature influenced the electrical properties of the bulk oxide and the interface, but the TEOS/O-3 ratio affected only the interface properties. (C) 2000 The Electrochemical Society. S0013-4651(99)07-045-7. All rights reserved. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Electrical properties of bulk silicon dioxide and SiO2/Si interface formed by tetraethylorthosilicate-ozone chemical vapor deposition | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1149/1.1393380 | - |
dc.author.google | Kim, HU | en_US |
dc.author.google | Rhee, SW | en_US |
dc.relation.volume | 147 | en_US |
dc.relation.issue | 4 | en_US |
dc.relation.startpage | 1473 | en_US |
dc.relation.lastpage | 1476 | en_US |
dc.contributor.id | 10052631 | en_US |
dc.relation.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.4, pp.1473 - 1476 | - |
dc.identifier.wosid | 000086343800039 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1476 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1473 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 147 | - |
dc.contributor.affiliatedAuthor | Rhee, SW | - |
dc.identifier.scopusid | 2-s2.0-33741052 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 40 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM-TRANSISTOR | - |
dc.subject.keywordPlus | SI/SIO2 INTERFACE | - |
dc.subject.keywordPlus | CHLORINE ADDITION | - |
dc.subject.keywordPlus | SPIN RESONANCE | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | WAFERS | - |
dc.subject.keywordPlus | TEMPERATURES | - |
dc.subject.keywordPlus | ROUGHNESS | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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