DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baik, JM | - |
dc.contributor.author | Jo, HK | - |
dc.contributor.author | Kang, TW | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T02:32:10Z | - |
dc.date.available | 2015-06-25T02:32:10Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2005-01 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.other | 2015-OAK-0000005266 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11150 | - |
dc.description.abstract | The effects of implanted nitrogen on microstructural, magnetic, and optical properties of Mn-implanted GaN were studied. N and Mn ions were coimplanted into p-GaN and subsequently annealed at 973-1173 K. Compared with Mn-implanted samples, the Curie temperature and magnetic moment significantly increased. From high-resolution transmission electron microscopy, Mn nitrides such as Mn6N2.58 and Mn3N2 drastically decreased, and the concentration of N vacancies was reduced by the N implantation. This led to the increase of Mn concentration occupying Ga lattice sites, evident by the shift of Raman mode (E-2) at 567 cm(-1) to higher energy by about 2.5 cm(-1). The photoluminescence peak at 2.92 eV shifted to 2.86 eV and became strong with N implantation, indicating an increase in effective hole concentration increased due to an enhanced activation of Mn impurities in p-GaN. Consequently, the enhancement of ferromagnetic property by coimplantation of Mn and N ions originated from the increase of hole concentration via the increase of Mn concentration in GaN, due to the suppression of production of Mn-N compounds. (c) 2005 The Electrochemical Society. All rights reserved. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Effects of implanted nitrogen on the microstructural, optical, and magnetic properties of Mn-implanted GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1149/1.1946528 | - |
dc.author.google | Baik, JM | en_US |
dc.author.google | Jo, HK | en_US |
dc.author.google | Lee, JL | en_US |
dc.author.google | Kang, TW | en_US |
dc.relation.volume | 152 | en_US |
dc.relation.issue | 8 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.152, no.8, pp.G608 - G612 | - |
dc.identifier.wosid | 000230494000060 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | G612 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | G608 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 152 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-25844517080 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.description.scptc | 2 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MOLECULAR-BEAM-EPITAXY | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | FERROMAGNETISM | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | BAND | - |
dc.subject.keywordPlus | (GA | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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