Identification of a gallium-containing carbon deposit produced by decomposition of trimethyl gallium
SCIE
SCOPUS
- Title
- Identification of a gallium-containing carbon deposit produced by decomposition of trimethyl gallium
- Authors
- Park, C; Kim, JH; Yoon, D; Han, S; Doh, C; Yeo, S; Lee, KH; null; erson, TJ
- Date Issued
- 2005-01
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- The composition, morphology, and structure of a gallium-containing carbon deposit that forms under certain conditions during hydride-organometallic vapor phase epitaxy (HOMVPE) of GaN were characterized by several techniques. The deposits are produced during pyrolysis of trimethyl gallium and results in gas-phase depletion of Ga, which reduces the growth rate and reproducibility of GaN growth. The morphology of the deposit depended on temperature, changing from granular to tubular-shape, and then to powder-like features with increasing temperature. The deposits were composed of metallic gallium cores surrounded by graphite skin layers. Interestingly, in the temperature range 560 to 660 degrees C the structure consisted of graphitic carbon-walled tubes filled to varying extents with Ga. The addition of H-2 to the carrier gas stream was found to be an effective method for reducing or eliminating the formation of the deposit. (c) 2005 The Electrochemical Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11152
- DOI
- 10.1149/1.1873452
- ISSN
- 0013-4651
- Article Type
- Article
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 152, no. 5, page. C298 - C303, 2005-01
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