DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J | - |
dc.contributor.author | Yong, K | - |
dc.date.accessioned | 2015-06-25T02:32:16Z | - |
dc.date.available | 2015-06-25T02:32:16Z | - |
dc.date.created | 2009-04-02 | - |
dc.date.issued | 2005-03 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.other | 2015-OAK-0000005047 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11153 | - |
dc.description.abstract | Atomic layer chemical vapor deposition (ALCVD) of hafnium silicate films using a precursor combination of tetrakis (diethylamido) hafnium, Hf(N(C2H5)(2))(4), and tetra-n-butyl orthosilicate, Si((OBu)-Bu-n)(4) was studied for high-dielectric gate oxides. The ALCVD temperature window in our study was 290-350 degrees C with a growth rate of 1.1 angstrom/cycle. We investigated the effect of deposition conditions, such as deposition temperature, pulse time of precursor, and purge injection, on the film growth. The saturated composition of the Hf/(Hf + Si) ratio was 0.37, and the impurity concentrations were less than 1 atom %. The dielectric constant (k) of the as-deposited hafnium silicate film increased upon annealing at 600 degrees C, but decreased for annealing above 800 degrees C. Hysteresis in the capacitance-voltage measurements was less than 0.3 V before and after annealing. The leakage current density of the as-deposited, 600 degrees C, and 800 degrees C annealed films was 5.3 x 10(-2), 2.2 x 10(-2), and 2.7 x 10(-6) A/cm(2), respectively, at a bias of -1 V. (c) 2005 The Electrochemical Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Atomic layer chemical vapor deposition and electrical characterization of hafnium silicate films | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1149/1.1869977 | - |
dc.author.google | Kim, J | en_US |
dc.author.google | Yong, K | en_US |
dc.relation.volume | 152 | en_US |
dc.relation.issue | 4 | en_US |
dc.relation.startpage | F45 | en_US |
dc.relation.lastpage | F48 | en_US |
dc.contributor.id | 10131864 | en_US |
dc.relation.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.152, no.4, pp.F45 - F48 | - |
dc.identifier.wosid | 000228521200053 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | F48 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | F45 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 152 | - |
dc.contributor.affiliatedAuthor | Yong, K | - |
dc.identifier.scopusid | 2-s2.0-18344396073 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 16 | - |
dc.description.scptc | 16 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TETRAKIS-DIETHYLAMIDO-HAFNIUM | - |
dc.subject.keywordPlus | N-BUTYL ORTHOSILICATE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordPlus | TETRACHLORIDE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | OXIDES | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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