수직 정렬된 실리콘 나노 선 배열의 테라헤르츠 광특성 연구

Abstract

Semiconductor nanowire arrays have been studied extensively for various applications in electronics and photonics. In particular, nanowires have attracted considerable attention for use in many applications. For the THz device applications of nanowires, a comprehensive understanding of the dielectric and transport properties of nanowires at THz frequencies is important. In this work, we present THz properties of silicon nanowire arrays measured by high-precision THz time domain spectroscopy. Vertically aligned silicon nanowire arrays have the effective complex conductivity tensor of a highly anisotropic. The silicon nanowire arrays were fabricated on a p-type silicon substrate by metal-assisted chemical etching, which resulted in a film with uniaxially anisotropic optical properties. The measured terahertz transverse and longitudinal conductivity values were in excellent agreement with the results of calculations based on the Drude-Smith and Lorentz models, respectively.