Graphene Growth and Optimizing Etching Process of SiC Substrates
- Title
- Graphene Growth and Optimizing Etching Process of SiC Substrates
- Authors
- 이동국
- Date Issued
- 2019
- Publisher
- 포항공과대학교
- Abstract
- Graphene, which consists of a single atomic layer of carbon atoms, has been attracting great
attention as a base material for next-generation electronic devices. It is essential to grow highquality
graphene in a large area in order to realize graphene-based electronic devices for mass
production. One of the methods is to grow graphene from a single crystalline 4H SiC(0001)
substrate, which is known as a method for large-scale growth. In this method we can get
graphene in a large area. Also, because of a wide band gap of SiC, graphene doesn`t have to
be transferred to other substrates like SiO2.
- URI
- http://postech.dcollection.net/common/orgView/200000178596
https://oasis.postech.ac.kr/handle/2014.oak/111629
- Article Type
- Thesis
- Files in This Item:
- There are no files associated with this item.
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