DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Ho Won | - |
dc.contributor.author | Son, Jun Ho | - |
dc.contributor.author | Lee, Jong-Lam | - |
dc.date.accessioned | 2015-06-25T02:32:42Z | - |
dc.date.available | 2015-06-25T02:32:42Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2008-01 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.other | 2015-OAK-0000007926 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11167 | - |
dc.description.abstract | Low resistance and high reflectance ohmic contacts on p-type GaN were achieved using an Ag-based metallization scheme. Oxidation annealing was the key to achieve ohmic behavior of Ag-based contacts on p-type GaN. A low contact resistivity of similar to 5x10(-5) Omega cm(2) could be achieved from Me (=Ni, Ir, Pt, or Ru)/Ag (50/1200 angstrom) contacts after annealing at 500 degrees C for 1 min in O(2) ambient. Oxidation annealing promoted the out-diffusion of Ga atoms from the GaN layer, and Ga atoms dissolved in the in-diffused Ag layer with the formation of Ag-Ga solid solution, resulting in ohmic contact formation. Using Ru/Ni/Au (500/200/500 angstrom) overlayers on the Me/Ag contacts, the excessive incorporation of oxygen molecules into the contact interfacial region, and the out-diffusion and agglomeration of Ag, were effectively prevented during oxidation annealing. As a result, a high reflectance of 87.2% at the 460 nm wavelength and a smooth surface morphology could be obtained simultaneously. (C) 2008 The Electrochemical Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Formation of high-quality Ag-based ohmic contacts to p-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1149/1.2940324 | - |
dc.author.google | Jang, HW | en_US |
dc.author.google | Son, JH | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 155 | en_US |
dc.relation.issue | 8 | en_US |
dc.relation.startpage | H563 | en_US |
dc.relation.lastpage | H568 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.8, pp.H563 - H568 | - |
dc.identifier.wosid | 000257421600048 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | H568 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | H563 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 155 | - |
dc.contributor.affiliatedAuthor | Lee, Jong-Lam | - |
dc.identifier.scopusid | 2-s2.0-46649103913 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 16 | - |
dc.description.scptc | 18 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SCHEME | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | RU | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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