DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, WH | en_US |
dc.contributor.author | Lee, HBR | en_US |
dc.contributor.author | 김형준 | en_US |
dc.contributor.author | Kim, H | en_US |
dc.contributor.author | Heo, J | en_US |
dc.contributor.author | Hong, S | en_US |
dc.contributor.author | Kim, CG | en_US |
dc.contributor.author | Chung, TM | en_US |
dc.contributor.author | Lee, YK | en_US |
dc.contributor.author | Heo, K | en_US |
dc.date.accessioned | 2015-06-25T02:33:24Z | - |
dc.date.available | 2015-06-25T02:33:24Z | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.identifier.citation | v.158 | en_US |
dc.identifier.citation | pp.D1-D5 | en_US |
dc.identifier.citation | no.1 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.other | 2015-OAK-0000031491 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11189 | - |
dc.description.abstract | Ni thin films were deposited by atomic layer deposition (ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)(2)] as a precursor and NH3 gas as a reactant. The growth characteristics and film properties of ALD Ni were investigated. Low-resistivity films were deposited on Si and SiO2 substrates, producing high-purity Ni films with a small amount of oxygen and negligible amounts of nitrogen and carbon. Additionally, ALD Ni showed excellent conformality in nanoscale via holes. Utilizing this conformality, Ni/Si core/shell nanowires with uniform diameters were fabricated. By combining ALD Ni with octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer, area-selective ALD was conducted for selective deposition of Ni films. When performed on the prepatterned OTS substrate, the Ni films were selectively coated only on OTS-free regions, building up Ni line patterns with 3 mu m width. Electrical measurement results showed that all of the Ni lines were electrically isolated, also indicating the selective Ni deposition. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3504196] All rights reserved. | en_US |
dc.description.statementofresponsibility | open | en_US |
dc.format.extent | en_US | |
dc.publisher | ELECTROCHEMICAL SOC INC | en_US |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.subject | MONOLAYER RESISTS | en_US |
dc.subject | NICKEL SILICIDE | en_US |
dc.subject | GATE | en_US |
dc.subject | METAL | en_US |
dc.subject | OXIDE | en_US |
dc.title | Atomic Layer Deposition of Ni Thin Films and Application to Area-Selective Deposition | en_US |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1149/1.3504196 | en_US |
dc.author.google | Kim, WH | en_US |
dc.author.google | Lee, HBR | en_US |
dc.author.google | Kim, H | en_US |
dc.author.google | Heo, J | en_US |
dc.author.google | Hong, S | en_US |
dc.author.google | Kim, CG | en_US |
dc.author.google | Chung, TM | en_US |
dc.author.google | Lee, YK | en_US |
dc.author.google | Heo, K | en_US |
dc.relation.volume | 158 | en_US |
dc.relation.issue | 1 | en_US |
dc.relation.startpage | D1 | en_US |
dc.relation.lastpage | D5 | en_US |
dc.publisher.location | US | en_US |
dc.relation.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
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