Investigation on Thermal Stability of Metal-Interlayer-Semiconductor Contacts Using Carbon Implantation

Abstract

Effects of carbon implantation (C-imp.) on the thermal stability of MIS (Metal-Interlayer-Semiconductor) contact were investigated. The experiment was conducted on both Si and Ge substrates. To improve the thermal stability in MIS contact, C-imp. into MIS structures was applied. The current density (J) - voltage (V) characteristics showed that C-imp. changed the rectifying behavior to the ohmic-like behavior. The Schottky barrier height (SBH) was also reduced by the C-imp. These improvements can be beneficial to reduce the lower contact resistivity (ρc) with the rapid thermal annealing (RTA) temperatures ranging from 450 to 600 ℃. From the transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) mapping, the MIS contact with C-imp. showed the suppression of oxygen diffusion into Ti layer. From the secondary ion mass spectrometry (SIMS) analysis, the segregation of P dopant at the interface was more facilitated with C-imp.. Thus, the C-imp. is promising to improve the thermal stability and to realize low contact resistivity of MIS contact.