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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, NY | - |
| dc.contributor.author | Yong, KJ | - |
| dc.contributor.author | Jeong, HS | - |
| dc.contributor.author | Kim, CM | - |
| dc.date.accessioned | 2015-06-25T02:34:39Z | - |
| dc.date.available | 2015-06-25T02:34:39Z | - |
| dc.date.created | 2009-04-02 | - |
| dc.date.issued | 2005-07 | - |
| dc.identifier.issn | 0734-2101 | - |
| dc.identifier.other | 2015-OAK-0000005292 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11229 | - |
| dc.description.abstract | Adsorption and reactions of tetrabutoxysilane (Si(OC4H9)(4)) on a Si(100) surface were investigated using temperature programmed desorption and x-ray photoelectron spectroscopy. Physisorbed tetrabutoxysilane undergoes C-O bond scission to form -O-Si(OC4H9)(3) and butyl species on Si(100) at 200 K. It is observed that further C-O bond scission takes place sequentially in the temperature range of 200-500 K. Main desorption products are butene and hydrogen, which are desorbed at 410 K and 820 K, respectively. We propose that the production of butene takes place through beta-hydride elimination of the butyl group on Si(100). (c) 2005 American Vacuum Society. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | A V S AMER INST PHYSICS | - |
| dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Adsorption and reactions of tetrabutoxysilane (TBOS) on Si(100) | - |
| dc.type | Article | - |
| dc.contributor.college | 화학공학과 | en_US |
| dc.identifier.doi | 10.1116/1.1927106 | - |
| dc.author.google | Lee, NY | en_US |
| dc.author.google | Yong, KJ | en_US |
| dc.author.google | Kim, CM | en_US |
| dc.author.google | Jeong, HS | en_US |
| dc.relation.volume | 23 | en_US |
| dc.relation.issue | 4 | en_US |
| dc.relation.startpage | 613 | en_US |
| dc.relation.lastpage | 616 | en_US |
| dc.contributor.id | 10131864 | en_US |
| dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.23, no.4, pp.613 - 616 | - |
| dc.identifier.wosid | 000230717200008 | - |
| dc.date.tcdate | 2018-03-23 | - |
| dc.citation.endPage | 616 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 613 | - |
| dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
| dc.citation.volume | 23 | - |
| dc.contributor.affiliatedAuthor | Yong, KJ | - |
| dc.identifier.scopusid | 2-s2.0-31044455324 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.scptc | 0 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
| dc.subject.keywordPlus | SILICON DIOXIDE | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.subject.keywordPlus | TETRAETHYLORTHOSILICATE | - |
| dc.subject.keywordPlus | SIO2-FILMS | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 용기중YONG, KIJUNG
- Dept. of Chemical Enginrg