Resist profile characteristics caused by photoelectron and Auger electron blur at the resist-tungsten substrate interface in 100 nm proximity x-ray lithography
SCIE
SCOPUS
- Title
- Resist profile characteristics caused by photoelectron and Auger electron blur at the resist-tungsten substrate interface in 100 nm proximity x-ray lithography
- Authors
- Seo, Y; Lee, C; Seo, Y; Kim, O; Noh, H; Kim, H
- Date Issued
- 2000-11
- Publisher
- AMER INST PHYSICS
- Abstract
- The replicated resist pattern characteristics caused by photoelectrons and Auger electrons generated from the W substrate were investigated for 100 nm proximity x-ray lithography. In addition, simulations for a hard x-ray spectrum having 2.36 keV average energy were performed to investigate the substrate electron effects in hard x-ray lithography. In the experiments, it was found that the secondary electrons from the W substrate caused undercut and footing of resist profiles at the resist-substrate interface. Several buffer layers with varying thicknesses were tested to reduce the photoelectron effects from the W substrate. The best thickness of the buffer layers for a good resist pattern profile was discovered to be >30 nm. Furthermore, the experimental results were quantitatively compared to the results from computer simulations using the Monte Carlo method. For hard x rays, we predict that the exposure latitude is worse on both W and Si substrates. (C) 2000 American Vacuum Society. [S0734-211X(00)13006-9].
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11251
- DOI
- 10.1116/1.1321292
- ISSN
- 1071-1023
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 18, no. 6, page. 3349 - 3353, 2000-11
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