Mosaic structure of various oriented grains in CoSi2/Si(001)

Abstract

We investigated the mosaic structure of CoSi2/Si(001) film in a synchrotron x-ray scattering experiment. The CoSi2 film, formed by thermal reaction of a 120 Angstrom Co film on Si(001), was composed largely of epitaxial grains of various orientations. In particular, the twin oriented (B-type) CoSi2(111) grains were grown epitaxially on the Si(lll) facets that were generated during annealing. Two distinct mosaic structures were observed in the CoSi2 grains; the epitaxial grains of the same orientation with the Si substrate, such as the CoSi2(001) [the CoSi2(111)] grains lying on the Si(001) [the Si(lll) facets], showed a small mosaicity of similar to 0.5 degrees full width at half maximum (FWHM), while those of different orientations demonstrated a rather broad mosaicity of similar to 2.5 degrees FWHM. We attributed the smaller mosaicity of the epitaxial grains of the same orientation to the reduced interfacial energy due to higher coincidence site density. (C) 2000 American Vacuum Society. [S0734-2101(00)03403-7].