DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, KJ | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T02:35:26Z | - |
dc.date.available | 2015-06-25T02:35:26Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2001-05 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.other | 2015-OAK-0000002045 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11255 | - |
dc.description.abstract | Surface states on n-type Al0.24Ga0.76As were studied using capacitance deep-level transient spectroscopy (DLTS). Two types of hole-like traps (labeled as H1 and H2 in this work) were observed in a Al0.24Ga0.76As/In(0.22)Ga(0.78)AS pseudomorphic high-electron-mobility transistor with a multifinger gate. But, no hole-like traps were observed in the fat field-effect transistor (FATFET) having a negligible ratio of the ungated surface to the total area between the source and the drain. This provides evidence that the hole-like trap peaks in the DLTS spectra originated from surface states at the ungated Al(0.24)Ga(0.76)AS regions exposed between gate and source/drain electrodes. The activation energies for both surface states were determined to be 0.50 +/-0.03 and 0.81 +/-0.01 eV. The comparison of activation energies of the two surface states with the Schottky barrier height 0.66 +/-0.01 eV suggests that H1 and H2 are deeply related to the Fermi energy pinning levels at the Al0.24Ga0.76As surface. (C) 2001 American Vacuum Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1116/1.1368679 | - |
dc.author.google | Choi, KJ | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 19 | en_US |
dc.relation.issue | 3 | en_US |
dc.relation.startpage | 615 | en_US |
dc.relation.lastpage | 621 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.19, no.3, pp.615 - 621 | - |
dc.identifier.wosid | 000169366600003 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 621 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 615 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 19 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-0035326449 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY TRANSISTOR | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | GAAS-MESFETS | - |
dc.subject.keywordPlus | TRANSCONDUCTANCE DISPERSION | - |
dc.subject.keywordPlus | CARRIER CAPTURE | - |
dc.subject.keywordPlus | DLTS SPECTRA | - |
dc.subject.keywordPlus | TRAPS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
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