DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, KH | - |
dc.contributor.author | Park, SG | - |
dc.contributor.author | Rhee, SW | - |
dc.date.accessioned | 2015-06-25T02:35:49Z | - |
dc.date.available | 2015-06-25T02:35:49Z | - |
dc.date.created | 2009-03-16 | - |
dc.date.issued | 2004-11 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.other | 2015-OAK-0000010554 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11267 | - |
dc.description.abstract | SiCOH films were deposited with plasma-enhanced chemical vapor deposition USin2 vinyltrimethylsilane (VTMS) as a precursor and CO2 as an oxidant. The properties of the films were compared with those films deposited with VTNIS and O-2. As-deposited films and the films annealed at 360 degreesC have been characterized. The growth rate decreased with increasing substrate temperature and increased with increasing CO2,/precursor ratio and plasma power. The dielectric constant was inversely proportional to the relative carbon content and the films deposited with CO2 had a higher carbon content than those deposited with O-2 It was confirmed that CO, was more effective to increase the carbon content. The refractive index of the as-deposited films was about 1.48-1.49 and decreased to 1.46 after annealing. The reduction of the refractive index was due to the lower density and increased porosity of the film. After annealing, the SiCOH films Showed a low dielectric. constant of 1.9 at optimum condition. (C) 2004 American Vacuum Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Nanocomposite low-k SiCOH films by plasma-enhanced chemical vapor deposition using vinyltrimethylsilane and CO2 | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1116/1.1811628 | - |
dc.author.google | Jeong, KH | en_US |
dc.author.google | Park, SG | en_US |
dc.author.google | Rhee, SW | en_US |
dc.relation.volume | 22 | en_US |
dc.relation.issue | 6 | en_US |
dc.relation.startpage | 2799 | en_US |
dc.relation.lastpage | 2803 | en_US |
dc.contributor.id | 10052631 | en_US |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.22, no.6, pp.2799 - 2803 | - |
dc.identifier.wosid | 000226439800043 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2803 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2799 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 22 | - |
dc.contributor.affiliatedAuthor | Rhee, SW | - |
dc.identifier.scopusid | 2-s2.0-13244299678 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 14 | - |
dc.description.scptc | 14 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
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