DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T02:36:05Z | - |
dc.date.available | 2015-06-25T02:36:05Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2005-11 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.other | 2015-OAK-0000005623 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11276 | - |
dc.description.abstract | Enhancement of electroluminescence in GaN-based light-emitting diodes (LEDs) was achieved using an efficient current blocking layer formed by postannealing, When a LED chip with Ni/Au pad on Ni/Au transparent p contact was annealed at 500 degrees C, the electroluminescence of the LED chip increased by 55%. The specific contact resistivity of metal contact below the p pad significantly increased due to indiffusion of Au and Ni atoms from the p pad to the contact interfacial region. As a result, an efficient current blocking layer could be formed below the p pad, enhancing the light output and decreasing the reverse leakage current of the LED chip, This result suggests that a further increase in the extraction efficiency of GaN-based LEDs can be easily obtained using the postannealing. (c) 2005 American Vacuum Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1116/1.2083931 | - |
dc.author.google | Jang, HW | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 23 | en_US |
dc.relation.issue | 6 | en_US |
dc.relation.startpage | 2284 | en_US |
dc.relation.lastpage | 2287 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.23, no.6, pp.2284 - 2287 | - |
dc.identifier.wosid | 000234613200008 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2287 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2284 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 23 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-29044438114 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 5 | - |
dc.description.scptc | 6 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | RESISTANCE OHMIC CONTACTS | - |
dc.subject.keywordPlus | OXIDIZED NI/AU | - |
dc.subject.keywordPlus | PLASMA | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
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