DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tak, Y | - |
dc.contributor.author | Park, D | - |
dc.contributor.author | Yong, KJ | - |
dc.date.accessioned | 2015-06-25T02:36:20Z | - |
dc.date.available | 2015-06-25T02:36:20Z | - |
dc.date.created | 2009-04-02 | - |
dc.date.issued | 2006-07 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.other | 2015-OAK-0000006166 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11284 | - |
dc.description.abstract | ZnO nanorod arrays fabricated on ZnO buffer layers on Si wafers were grown using a low-temperature solution method and were characterized by various techniques. Buffer layers were prepared using metal organic chemical vapor deposition and a sputter-oxidation method. Aligned ZnO nanorods were deposited at 90 degrees C on the substrates by a hydrothermal treatment using a zinc salt and aqueous ammonia solution. The ZnO nanorod arrays were characterized by scanning electron microscopy, x-ray diffraction., x-ray photoelectron spectroscopy, Raman spectroscopy, and photoluminescence spectroscopy. The as-grown ZnO nanorod arrays exhibited broad deep-level emission centered at similar to 564 nm. The intensity of the deep-level emission decreased and band edge emission centered at 379 nut appeared after air annealing. Samples annealed in hydrogen showed only band edge emission. (c) 2006 American Vacuum Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Characterization of ZnO nanorod arrays fabricated on Si wafers using a low-temperature synthesis method | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1016/1.2216714 | - |
dc.author.google | Tak, Y | en_US |
dc.author.google | Park, D | en_US |
dc.author.google | Yong, KJ | en_US |
dc.relation.volume | 24 | en_US |
dc.relation.issue | 4 | en_US |
dc.relation.startpage | 2047 | en_US |
dc.relation.lastpage | 2052 | en_US |
dc.contributor.id | 10131864 | en_US |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Conference Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.4, pp.2047 - 2052 | - |
dc.identifier.wosid | 000239890000063 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2052 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 2047 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 24 | - |
dc.contributor.affiliatedAuthor | Yong, KJ | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 48 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | RAY PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE PROPERTIES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ROUTE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
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