DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, JS | - |
dc.contributor.author | Kang, SW | - |
dc.contributor.author | Kim, H | - |
dc.date.accessioned | 2015-06-25T02:36:24Z | - |
dc.date.available | 2015-06-25T02:36:24Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2006-05 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.other | 2015-OAK-0000006054 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/11286 | - |
dc.description.abstract | Ti-Si-N thin films were deposited by plasma-enhanced atomic layer deposition from TiCl4, SiH4, and N-2/H-2/Ar plasma at 350 degrees C. For comparison, TiN plasma-enhanced atomic layer deposition (PEALD) was also performed from TiCl4. The effects of growth parameters on film properties were studied. Especially, the changes in sequences of precursor-reactant exposure steps were found to produce large change in the growth rates and Si concentration in the films. The results are discussed based upon the molecule-surface reaction mechanisms. Also, the Cu diffusion barrier properties of the PEALD Ti-Si-N films were investigated. PEALD Ti-Si-N films have shown better diffusion barrier properties than PEALD TiN films and can be a promising candidate for future Cu interconnect technology beyond 65 nm technology node.] (c) 2006 American Vacuum Society. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1116/1.2198846 | - |
dc.author.google | "Park, JS | en_US |
dc.author.google | Kang, SW | en_US |
dc.author.google | Kim, H" | en_US |
dc.relation.issue | 3 | en_US |
dc.relation.startpage | 1327 | en_US |
dc.relation.lastpage | 1332 | en_US |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.3, pp.1327 - 1332 | - |
dc.identifier.wosid | 000238790000042 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1332 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1327 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 24 | - |
dc.contributor.affiliatedAuthor | Kim, H | - |
dc.identifier.scopusid | 2-s2.0-33744931887 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 15 | - |
dc.description.scptc | 13 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
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