Photoconductivity of vertically aligned ZnO nanoneedle array
SCIE
SCOPUS
- Title
- Photoconductivity of vertically aligned ZnO nanoneedle array
- Authors
- Park, D; Yong, K
- Date Issued
- 2008-11
- Publisher
- A V S AMER INST PHYSICS
- Abstract
- A high-density vertically well-aligned ZnO nanoneedle array was fabricated on a ZnO-buffer film on silicon substrates by metal-organic chemical vapor deposition at a growth temperature of 480-500 degrees C. Highly crystalline ZnO nanoneedle arrays showed a strong near-bandedge emission at 380 nm in room-temperature photoluminescence. A simple ultraviolet (UV) sensor was fabricated by evaporating a Ag electrode on the ZnO nanoneedle array. The photoresponse results showed very high photocurrent (similar to 10(-4) A) from ZnO nanoneedles compared to a single-nanowire sensor (similar to 10(-8) A), indicating high sensitivity of the photosensor. It also showed fast rise and decay times in UV-on/off switching measurements.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11290
- DOI
- 10.1116/1.2998730
- ISSN
- 1071-1023
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 26, no. 6, page. 1933 - 1936, 2008-11
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