DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이용수 | - |
dc.contributor.author | KIM, SUNMEAN | - |
dc.contributor.author | 이호인 | - |
dc.contributor.author | 김소영 | - |
dc.contributor.author | 김기영 | - |
dc.contributor.author | HEEJIN, KWON | - |
dc.contributor.author | HAE, WON LEE | - |
dc.contributor.author | 황현준 | - |
dc.contributor.author | SEUNG, MO KIM | - |
dc.contributor.author | KANG, SEOKHYEONG | - |
dc.contributor.author | LEE, BYOUNG HUN | - |
dc.date.accessioned | 2023-02-23T06:20:57Z | - |
dc.date.available | 2023-02-23T06:20:57Z | - |
dc.date.created | 2023-02-22 | - |
dc.date.issued | 2022-07 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/115479 | - |
dc.description.abstract | Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a very high peak-to-valley ratio (∼106) and adjustable operating range characteristics was successfully demonstrated using a ZnO and dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene heterojunction structure. The entire device integration was completed at a low thermal budget of less than 200 °C, which makes this AAS device compatible with monolithic 3D integration. A 1-trit ternary full adder designed with this AAS device exhibits excellent power–delay product performance (∼122 aJ) with extremely low power (∼0.15 μW, 7 times lower than the reference circuit) and lower device count than those of other ternary device candidates. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.relation.isPartOf | ACS Nano | - |
dc.title | Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsnano.2c03523 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS Nano, v.16, no.7, pp.10994 - 11003 | - |
dc.identifier.wosid | 000822431200001 | - |
dc.citation.endPage | 11003 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 10994 | - |
dc.citation.title | ACS Nano | - |
dc.citation.volume | 16 | - |
dc.contributor.affiliatedAuthor | 이용수 | - |
dc.contributor.affiliatedAuthor | KIM, SUNMEAN | - |
dc.contributor.affiliatedAuthor | 이호인 | - |
dc.contributor.affiliatedAuthor | 김소영 | - |
dc.contributor.affiliatedAuthor | 김기영 | - |
dc.contributor.affiliatedAuthor | HEEJIN, KWON | - |
dc.contributor.affiliatedAuthor | HAE, WON LEE | - |
dc.contributor.affiliatedAuthor | 황현준 | - |
dc.contributor.affiliatedAuthor | SEUNG, MO KIM | - |
dc.contributor.affiliatedAuthor | KANG, SEOKHYEONG | - |
dc.contributor.affiliatedAuthor | LEE, BYOUNG HUN | - |
dc.identifier.scopusid | 2-s2.0-85135227536 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.type.docType | Article; Early Access | - |
dc.subject.keywordPlus | MULTIPLE-VALUED LOGIC | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor |   | - |
dc.subject.keywordAuthor | anti-ambipolar | - |
dc.subject.keywordAuthor | heterojunction | - |
dc.subject.keywordAuthor | low thermal budget | - |
dc.subject.keywordAuthor | ternary logic | - |
dc.subject.keywordAuthor | pull-middle network | - |
dc.subject.keywordAuthor | ternary full adder | - |
dc.subject.keywordAuthor | low-power system | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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