Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography

Abstract

Field-effect transistors based on two-dimensional materials are a potential replacement for silicon-based devices in next-generation semiconductor chips. However, the weak interfacial adhesion energy between two-dimensional materials and substrates can lead to low yields and non-uniform transistors on the wafer scale. Furthermore, conventional photolithography processes-including photochemical reactions and chemical etching-can damage atomically thin materials. Here we show that the interfacial adhesion energy between two-dimensional materials and different substrates can be quantified using a four-point bending method. We find that a molybdenum disulfide/silicon dioxide interface has an interfacial adhesion energy of 0.2 J m(-2), which can be modulated from 0 to 1.0 J m(-2) by incorporating self-assembled monolayers with different end-termination chemistries. We use this to create an adhesion lithography method that is based on adhesion energy differences and physical etching processes. We use this approach to fabricate more than 10,000 molybdenum disulfide field-effect transistors on six-inch wafers with a yield of around 100%.