DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김시현 | - |
dc.contributor.author | HWANG, HYEON JUN | - |
dc.contributor.author | Min Gyu Kwon | - |
dc.contributor.author | YOO, TAEJIN | - |
dc.contributor.author | Kyoung Eun Chang | - |
dc.contributor.author | LEE, BYOUNG HUN | - |
dc.date.accessioned | 2023-02-27T08:41:00Z | - |
dc.date.available | 2023-02-27T08:41:00Z | - |
dc.date.created | 2023-02-27 | - |
dc.date.issued | 2021-05 | - |
dc.identifier.issn | 2192-8606 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/115834 | - |
dc.description.abstract | The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 x 10(10) cm . Hz(1/2)W(-1). The responsivity is improved to 1.2 AW(-1) with an interfacial layer from 0.5 AW(-1) of the reference devices. The normalized photo-todark current ratio is improved to 4.3 x 10(7) W-1 at a wavelength of 1550 nm, which is 10-100 times higher than those of other Ge photodetectors. | - |
dc.language | English | - |
dc.publisher | WALTER DE GRUYTER GMBH | - |
dc.relation.isPartOf | Nanophotonics | - |
dc.title | Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer | - |
dc.type | Article | - |
dc.identifier.doi | 10.1515/nanoph-2021-0002 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Nanophotonics, v.10, no.5, pp.1573 - 1579 | - |
dc.identifier.wosid | 000630495000013 | - |
dc.citation.endPage | 1579 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1573 | - |
dc.citation.title | Nanophotonics | - |
dc.citation.volume | 10 | - |
dc.contributor.affiliatedAuthor | 김시현 | - |
dc.contributor.affiliatedAuthor | HWANG, HYEON JUN | - |
dc.contributor.affiliatedAuthor | YOO, TAEJIN | - |
dc.contributor.affiliatedAuthor | LEE, BYOUNG HUN | - |
dc.identifier.scopusid | 2-s2.0-85102063409 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | GERMANIUM | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | graphene/germanium heterostructure | - |
dc.subject.keywordAuthor | interfacial oxide layer | - |
dc.subject.keywordAuthor | photodetector | - |
dc.subject.keywordAuthor | Schottky junction | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
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