Field-effect transistors based on tin halide perovskites
- Title
- Field-effect transistors based on tin halide perovskites
- Authors
- ZHU, HUIHUI
- Date Issued
- 2022
- Publisher
- 포항공과대학교
- Abstract
- This dissertation investigates field-effect transistors (FETs) based on tin halide
perovskites as the channel materials.
As an emerging class of semiconductors with remarkable properties, metal halide
perovskites have enabled unprecedented performance improvements in diverse
optoelectronic devices. In comparison, their prospects in high-performance transistors,
which are fundamental building blocks for modern electronics, remain to be
investigated.
This dissertation presents the channel material structures, electrical band
characteristics, device physics and FET performance improvements. Based on the
increasing understanding on perovskite structure-property and defect-property
relationships, this dissertation demonstrates an evolution of tin-based perovskite FETs,
including the channel layers evolving from two-dimensional (2D) Ruddlesden-Popper
(RP) tin-based perovskites, which are optimized elaborately using different strategies,
to the 3D ASnX 3 perovskites, which have not been reported before. Meanwhile, the
hole mobilities of the resulting FETs increase from the initial 0.5 cm 2 V −1 s −1 to over 70
cm 2 V −1 s −1 along with other enhanced FET parameters. More importantly, the evolution
of the FET characteristics helps me deepen the understanding on the structure-property
and defect-property relationships, which are also discussed in detail in this dissertation.
- URI
- http://postech.dcollection.net/common/orgView/200000632158
https://oasis.postech.ac.kr/handle/2014.oak/117341
- Article Type
- Thesis
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