Interface engineering of a highly sensitive solution processed organic photodiode
SCIE
SCOPUS
- Title
- Interface engineering of a highly sensitive solution processed organic photodiode
- Authors
- Kim, YJ; Park, CE; Chung, DS
- Date Issued
- 2014-09-14
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- We report on tuning of the interfacial properties of a highly sensitive organic photodiode by introducing a buffer layer between the anode and the semiconductor layer. The effects of different buffer layers consisting of a self-assembled monolayer (SAM), PEDOT:PSS, and pentacene on the morphology and crystallinity of the upper-deposited bulk heterojunction semiconductor layer are carefully analyzed combined with electrical analysis. The active layer is controlled to be nearly homogeneous and to have low crystallinity by using a SAM or PEDOT:PSS buffer layers, whereas a highly crystalline morphology is realized by using the pentacene buffer layer. When exposed to light pulses, the external quantum efficiency and thus the photocurrent are slightly higher for the PEDOT:PSS-based photodiode; however the dark current is the lowest for the pentacene-based photodiode. We discuss the origin of the high sensitivity (a detectivity of 1.3 x 10(12) Jones and a linear dynamic range of 95 dB) of the pentacene-based photodiode, particularly in terms of the morphology-driven tow dark current.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11917
- DOI
- 10.1039/C4CP02301C
- ISSN
- 1463-9076
- Article Type
- Article
- Citation
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS, vol. 16, no. 34, page. 18472 - 18477, 2014-09-14
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