Dopant Engineering of Hafnia-Based Ferroelectrics for Long Data Retention and High Thermal Stability
SCIE
SCOPUS
- Title
- Dopant Engineering of Hafnia-Based Ferroelectrics for Long Data Retention and High Thermal Stability
- Authors
- Kim, Ik-Jyae; Lee, Jang-Sik
- Date Issued
- 2024-03
- Publisher
- John Wiley and Sons Inc
- Abstract
- Hafnia-based ferroelectrics have gained much attention because they can be used in highly scaled, advanced complementary metal-oxide semiconductor (CMOS) memory devices. However, thermal stability should be considered when integrating hafnia-based ferroelectric transistors in advanced CMOS devices, as they can be exposed to high-temperature processes. This work proposed that doping of Al in hafnia-based ferroelectric material can lead to high thermal stability. A ferroelectric capacitor based on Al-doped hafnia, which can be used for one-transistor-one-capacitor applications, exhibits stable operation even after annealing at 900 °C. Moreover, it demonstrates that the ferroelectric transistors based on Al-doped hafnia for one-transistor applications, such as ferroelectric NAND, retain their memory states for 10 years at 100 °C. This study presents a practical method to achieve thermally stable ferroelectric memories capable of enduring high-temperature processes and operation conditions.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/119957
- DOI
- 10.1002/smll.202306871
- ISSN
- 1613-6810
- Article Type
- Article
- Citation
- Small, vol. 20, no. 13, 2024-03
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- There are no files associated with this item.
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